onsemi EFC4C012NLTDG

onsemi · FETs & Power MOSFETs · MPN EFC4C012NLTDG

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Specifications

Drain to Source Voltage30V
ConfigurationCommon Drain
Gate Charge(Qg)18nC@4.5V
Current - Continuous Drain(Id)19A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation2.5W
RDS(on)6.5mΩ@10V
Number2 N-Channel

Technical details

N-Channel Array 30V 19A 2.5W Surface Mount WLCSP-6(1.9x3.5)

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