onsemi EFC4C002NLTDG

onsemi · FETs & Power MOSFETs · MPN EFC4C002NLTDG

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Specifications

ConfigurationCommon Drain
Gate Charge(Qg)45nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation2.6W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.6mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)6.2pF

Technical details

N-Channel Array 30V 30A 2.6W Surface Mount WLCSP-8(2.5x6)

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