onsemi · FETs & Power MOSFETs · MPN EFC3C001NUZTCG
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| Gate Charge(Qg) | 15nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 30mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
20V 6A 1.3V 1.6W 30mΩ@4.5V 2 N-Channel WLCSP-4 Single FETs, MOSFETs RoHS