onsemi · FETs & Power MOSFETs · MPN EFC2K102ANUZTDG
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| Current - Continuous Drain(Id) | 33A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 6.1mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Drain to Source Voltage | 12V |
| Type | N-Channel |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 42nC@3.8V |
| Operating Temperature | -40℃~+150℃ |
N-Channel Array 12V 33A 3.1W Surface Mount WLCSP-10(2.98x1.49)