onsemi EFC2K102ANUZTDG

onsemi · FETs & Power MOSFETs · MPN EFC2K102ANUZTDG

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Specifications

Current - Continuous Drain(Id)33A
Pd - Power Dissipation3.1W
RDS(on)6.1mΩ@2.5V
Gate Threshold Voltage (Vgs(th))1.3V
Drain to Source Voltage12V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)42nC@3.8V
Operating Temperature-40℃~+150℃

Technical details

N-Channel Array 12V 33A 3.1W Surface Mount WLCSP-10(2.98x1.49)

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