onsemi EFC2J013NUZTDG

onsemi · FETs & Power MOSFETs · MPN EFC2J013NUZTDG

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)17A
RDS(on)5.8mΩ@4.5V
Pd - Power Dissipation1.8W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage12V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)37nC@4.5V
Operating Temperature-40℃~+150℃

Technical details

17A 5.8mΩ@4.5V 1.8W 2 N-Channel WLCSP-6(1.5x2) FET, MOSFET Arrays RoHS

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