onsemi ECH8668-TL-H

onsemi · FETs & Power MOSFETs · MPN ECH8668-TL-H

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Specifications

Gate Charge(Qg)10.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)7.5A;5A
Operating Temperature --40℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)17mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.06nF

Technical details

20V 1.3W 17mΩ@4.5V 1 N-Channel + 1 P-Channel SOT-28FL Single FETs, MOSFETs RoHS

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