onsemi ECH8315-TL-H

onsemi · FETs & Power MOSFETs · MPN ECH8315-TL-H

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)200pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)49mΩ@24V
Number1 P-Channel
Input Capacitance(Ciss)875pF
TypeP-Channel

Technical details

30V 7.5A 2.6V 1.5W 49mΩ@24V 1 P-Channel P-Channel SOT-28FL Single FETs, MOSFETs RoHS

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