onsemi DTC143ZET1G

onsemi · Transistors (BJTs) · MPN DTC143ZET1G

No reviews yet — be the first to review onsemi DTC143ZET1G.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain80
Vce Saturation(VCE(sat))250mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))200mV
Input Resistor4.7kΩ
Resistor Ratio0.1
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SC-75(SOT-416)

Related Transistors (BJTs)