onsemi DTC123TET1G

onsemi · Transistors (BJTs) · MPN DTC123TET1G

No reviews yet — be the first to review onsemi DTC123TET1G.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain160
Vce Saturation(VCE(sat))250mV@10mA,1mA
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.9kΩ
Resistor Ratio-
Pd - Power Dissipation200mW

Technical details

50V 160 100mA 200mW NPN 1 NPN (Pre-Biased) SC-75-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)