onsemi · Transistors (BJTs) · MPN DTC114TET1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 160 |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| type | NPN |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5.0V |
50V 160 100mA NPN 1 NPN (Pre-Biased) 200mW SOT-416-3 Single, Pre-Biased Bipolar Transistors RoHS