onsemi · Transistors (BJTs) · MPN DTA114EM3T5G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 35 |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 10kΩ |
| type | PNP |
| Resistor Ratio | 1 |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 260mW |
| Voltage - Input(Max)(VI(off)) | 800mV |
50V 35 100mA PNP 1 PNP Pre-Biased 260mW SOT-723-3 Single, Pre-Biased Bipolar Transistors RoHS