onsemi D44H8G

onsemi · Transistors (BJTs) · MPN D44H8G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain60
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 60V 10A 50MHz 2W Through Hole TO-220

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