onsemi BVSS138LT1G

onsemi · FETs & Power MOSFETs · MPN BVSS138LT1G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage50V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)200mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)10Ω@2.75V
Number1 N-channel
Input Capacitance(Ciss)50pF
TypeN-Channel

Technical details

N-Channel 50V 200mA 225mW Surface Mount SOT-23

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