onsemi · FETs & Power MOSFETs · MPN BVSS123LT1G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 170mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 225mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 20pF |
N-Channel 100V 170mA 225mW Surface Mount SOT-23