onsemi BUX85G

onsemi · Transistors (BJTs) · MPN BUX85G

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Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO450V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation50W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor NPN 450V 2A 4MHz 50W Through Hole TO-220

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