onsemi · Transistors (BJTs) · MPN BUT11AFTU
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| Current - Collector Cutoff | 1mA |
|---|---|
| Collector - Emitter Voltage VCEO | 450V |
| Emitter-Base Voltage VEBO | 9V |
| DC Current Gain | - |
| Pd - Power Dissipation | 40W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 5A |
| Vce Saturation(VCE(sat)) | 1.5V |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN 450V 5A 40W Through Hole TO-220-3