onsemi BUB323ZG

onsemi · Transistors (BJTs) · MPN BUB323ZG

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)2MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain500
Pd - Power Dissipation150W
typeNPN
Current - Collector(Ic)10A
Vce Saturation(VCE(sat))1.7V
Operating Temperature-65℃~+175℃@(Tj)

Technical details

350V 500 NPN 10A D2PAK Single Bipolar Transistors RoHS

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