onsemi · Transistors (BJTs) · MPN BU406G
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| Current - Collector Cutoff | 1mA |
|---|---|
| Transition frequency(fT) | 10MHz |
| Collector - Emitter Voltage VCEO | 200V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | - |
| Pd - Power Dissipation | 60W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 7A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220AB