onsemi BSV52LT1G

onsemi · Transistors (BJTs) · MPN BSV52LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)400MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain25
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 12V 100mA 400MHz 300mW Surface Mount SOT-23

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