onsemi BSS84LT1G

onsemi · FETs & Power MOSFETs · MPN BSS84LT1G

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Specifications

Gate Charge(Qg)2.2nC@10V
Drain to Source Voltage50V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)130mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)10Ω@5V
Number1 P-Channel
Input Capacitance(Ciss)36pF
TypeP-Channel

Technical details

P-Channel 50V 130mA 225mW Surface Mount SOT-23

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