onsemi BSS123LT1G

onsemi · FETs & Power MOSFETs · MPN BSS123LT1G

No reviews yet — be the first to review onsemi BSS123LT1G.

Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation225mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)20pF

Technical details

N-Channel 100V 0.17A 225mW Surface Mount SOT-23

Related FETs & Power MOSFETs