onsemi BSS123L

onsemi · FETs & Power MOSFETs · MPN BSS123L

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation360mW
RDS(on)6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)21.5pF

Technical details

100V 170mA 2V 360mW 6Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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