onsemi · FETs & Power MOSFETs · MPN BSS123-G
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| Gate Charge(Qg) | 2.5nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 170mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 360mW |
| RDS(on) | 6Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 73pF |
100V 170mA 2V 360mW 6Ω@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS