onsemi BSS123

onsemi · FETs & Power MOSFETs · MPN BSS123

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Current - Continuous Drain(Id)170mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)3.4pF
RDS(on)10Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)73pF

Technical details

N-Channel 100V 0.17A 0.36W Surface Mount SOT-23

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