onsemi BS170-D75Z

onsemi · FETs & Power MOSFETs · MPN BS170-D75Z

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF

Technical details

60V 500mA 3V 830mW 5Ω@10V 1 N-channel TO-92-3 Single FETs, MOSFETs RoHS

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