onsemi BS170-D27Z

onsemi · FETs & Power MOSFETs · MPN BS170-D27Z

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)17pF
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)7pF
RDS(on)5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)40pF
Vgs±20V

Technical details

N-Channel 60V 500mA 830mW Through Hole TO-92

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