onsemi BMS4007-1E

onsemi · FETs & Power MOSFETs · MPN BMS4007-1E

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Specifications

Gate Charge(Qg)160nC
Drain to Source Voltage75V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
RDS(on)7.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)360pF
Input Capacitance(Ciss)9.7nF
TypeN-Channel

Technical details

75V 60A 4V 30W 7.8mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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