onsemi BMS3004-1E

onsemi · FETs & Power MOSFETs · MPN BMS3004-1E

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Specifications

Gate Charge(Qg)300nC@10V
Drain to Source Voltage75V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)68A
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)740pF
RDS(on)8.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)13.4nF
TypeP-Channel

Technical details

75V 68A 2.6V 40W 8.5mΩ@10V 1 P-Channel P-Channel TO-220F-3 Single FETs, MOSFETs

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