onsemi BD809G

onsemi · Transistors (BJTs) · MPN BD809G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)1.5MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain15
Pd - Power Dissipation90W
typeNPN
Current - Collector(Ic)10A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1.1V

Technical details

80V 15 NPN 10A TO-220 Single Bipolar Transistors RoHS

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