onsemi · Transistors (BJTs) · MPN BD681G
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| Current - Collector Cutoff | 200uA |
|---|---|
| Vbe On(VBE(on)) | 2.5V |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 750 |
| Pd - Power Dissipation | 40W |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 2.5V |
100V 750 NPN 4A TO-225-3 Single Bipolar Transistors RoHS