onsemi BD180G

onsemi · Transistors (BJTs) · MPN BD180G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation30W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))800mV

Technical details

Bipolar (BJT) Transistor PNP 80V 1A 3MHz 30W Through Hole TO-225-3

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