onsemi BD13910S

onsemi · Transistors (BJTs) · MPN BD13910S

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain63
Pd - Power Dissipation1.25W
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

80V 63 NPN 1.5A TO-126 Single Bipolar Transistors RoHS

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