onsemi BD135G

onsemi · Transistors (BJTs) · MPN BD135G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation12.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 45V 1.5A 12.5W Through Hole TO-225-3

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