onsemi BCP68T1G

onsemi · Transistors (BJTs) · MPN BCP68T1G

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain85
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 20V 1A 60MHz 1.5W Surface Mount SOT-223

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