onsemi BC33740TA

onsemi · Transistors (BJTs) · MPN BC33740TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor NPN 50V 800mA 100MHz 625mW Through Hole TO-92-3L

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