onsemi · FETs & Power MOSFETs · MPN BBS3002-DL-1E
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| Gate Charge(Qg) | 280nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 13.2nF |
60V 1.2V 90W 1 P-Channel TO-263 Single FETs, MOSFETs RoHS