onsemi · FETs & Power MOSFETs · MPN ATP114-TL-H
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| Gate Charge(Qg) | 92nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF |
| RDS(on) | 12mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4nF |
60V 55A 60W 12mΩ@10V 1 P-Channel Single FETs, MOSFETs RoHS