onsemi · FETs & Power MOSFETs · MPN ATP113-TL-H
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| Gate Charge(Qg) | 55nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 29.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.4nF |
P-Channel 60V 35A 50W ATPAK-3