onsemi ATP108-TL-H

onsemi · FETs & Power MOSFETs · MPN ATP108-TL-H

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Specifications

Gate Charge(Qg)79.5nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)390pF
RDS(on)10.4mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.85nF

Technical details

40V 70A 60W 10.4mΩ@4.5V 1 P-Channel Single FETs, MOSFETs RoHS

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