onsemi ATP102-TL-H

onsemi · FETs & Power MOSFETs · MPN ATP102-TL-H

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Specifications

Gate Charge(Qg)15.7nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)18.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.49nF

Technical details

P-Channel 30V 40A 40W ATPAK-3

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