onsemi · Thyristors & Power Discretes · MPN AFGY160T65SPD-B4
No reviews yet — be the first to review onsemi AFGY160T65SPD-B4.
| Td(off) | 98ns |
|---|---|
| Pd - Power Dissipation | 882W |
| Td(on) | 53ns |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Current - Collector(Ic) | 240A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 55pF |
| IGBT Type | FS (Field Stop) |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.3V@160mA |
| Vce Saturation(VCE(sat)) | 2.05V@160A,15V |
| Reverse Recovery Time(trr) | 132ns |
| Switching Energy(Eoff) | 5.7mJ |
IGBT FS (Field Stop) 650V 240A 882W Through Hole TO-247-3