onsemi · FETs & Power MOSFETs · MPN 6HN04MH-TL-E
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 1.88nC@10V |
| Output Capacitance(Coss) | 8.6pF |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 600mW |
| RDS(on) | 2.4Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.4pF |
| Input Capacitance(Ciss) | 27pF |
60V 200mA 1.2V 600mW 2.4Ω@10V Single FETs, MOSFETs RoHS