onsemi 5HP01C-TB-E

onsemi · FETs & Power MOSFETs · MPN 5HP01C-TB-E

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)1.32nC@10V
Output Capacitance(Coss)4pF
Current - Continuous Drain(Id)70mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250mW
RDS(on)22Ω@10V
Reverse Transfer Capacitance (Crss@Vds)1.3pF
Input Capacitance(Ciss)6.2pF
TypeP-Channel

Technical details

50V 70mA 2.5V 250mW 22Ω@10V P-Channel Single FETs, MOSFETs RoHS

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