onsemi · Transistors (BJTs) · MPN 55GN01CA-TB-E
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 10V |
| Pd - Power Dissipation | 200mW |
| DC Current Gain | 100 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 70mA |
| Transition frequency(fT) | 5.5GHz |
| type | NPN |
| Number | 1 NPN |
Bipolar (BJT) Transistor NPN 10V 70mA 5.5GHz 200mW Surface Mount CP-3