onsemi · FETs & Power MOSFETs · MPN 3SK264-5-TG-E
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| Drain to Source Voltage | 15V |
|---|---|
| Current - Continuous Drain(Id) | 30mA |
| Type | N-Channel |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 200mW |
| Operating Temperature | -25℃~+125℃ |
| Reverse Transfer Capacitance (Crss@Vds) | 0.03pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5pF |
15V 30mA 1.3V 200mW 1 N-channel RF FETs, MOSFETs RoHS