onsemi 3SK264-5-TG-E

onsemi · FETs & Power MOSFETs · MPN 3SK264-5-TG-E

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Specifications

Drain to Source Voltage15V
Current - Continuous Drain(Id)30mA
TypeN-Channel
Gate Threshold Voltage (Vgs(th))1.3V
Pd - Power Dissipation200mW
Operating Temperature-25℃~+125℃
Reverse Transfer Capacitance (Crss@Vds)0.03pF
Number1 N-channel
Input Capacitance(Ciss)2.5pF

Technical details

15V 30mA 1.3V 200mW 1 N-channel RF FETs, MOSFETs RoHS

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