onsemi · FETs & Power MOSFETs · MPN 3LN01CPA-TB-E
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 1.58nC@10V |
| Current - Continuous Drain(Id) | 150mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 250mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.3pF |
| RDS(on) | 12.8Ω@1.5V |
| Input Capacitance(Ciss) | 7pF |
| Type | N-Channel |
30V 150mA 400mV 250mW 12.8Ω@1.5V N-Channel Single FETs, MOSFETs RoHS