onsemi · FETs & Power MOSFETs · MPN 2SK3614-Q-TD-E
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| Gate Charge(Qg) | 7.8nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 34pF |
| RDS(on) | 215mΩ@4V |
| Input Capacitance(Ciss) | 300pF |
| Type | N-Channel |
60V 4A 2.6V 3.5W 215mΩ@4V N-Channel Single FETs, MOSFETs RoHS