onsemi 2SJ661-DL-1E

onsemi · FETs & Power MOSFETs · MPN 2SJ661-DL-1E

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Specifications

Gate Charge(Qg)80nC@30V
Drain to Source Voltage60V
Current - Continuous Drain(Id)38A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)335pF
RDS(on)29.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.36nF

Technical details

60V 38A 65W 29.5mΩ@10V 1 P-Channel TO-263-2 Single FETs, MOSFETs RoHS

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