onsemi · FETs & Power MOSFETs · MPN 2SJ654
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 20nC@10V |
| Output Capacitance(Coss) | 72pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 315mΩ@10V |
| Input Capacitance(Ciss) | 945pF |
| Type | P-Channel |
100V 8A 2.6V 20W 315mΩ@10V P-Channel Single FETs, MOSFETs RoHS