onsemi · FETs & Power MOSFETs · MPN 2SJ652-1E
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| Gate Charge(Qg) | 80nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 335pF |
| RDS(on) | 38mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.36nF |
60V 28A 30W 38mΩ@10V 1 P-Channel TO-220F-3 Single FETs, MOSFETs RoHS